The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2022
Filed:
Mar. 03, 2020
American Air Liquide, Inc., Fremont, CA (US);
L'air Liquide, Société Anonyme Pour L'etude ET L'exploitation Des Procédés Georges Claude, Paris, FR;
Air Liquide Electronics U.s. Lp, Dallas, TX (US);
Vijay Surla, Newark, DE (US);
Rahul Gupta, Newark, DE (US);
Hui Sun, Hockessin, DE (US);
Venkateswara R. Pallem, Hockessin, DE (US);
Nathan Stafford, Damascas, OR (US);
Fabrizio Marchegiani, Yokosuka, JP;
Vincent M. Omarjee, Paris, FR;
James Royer, Newark, DE (US);
American Air Liquide, Inc., Fremont, CA (US);
L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, Paris, FR;
Air Liquide Electronics U.S. LP, Dallas, TX (US);
Abstract
A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of an iodine-containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the iodine-containing etching compound has the formula CHFI, wherein a=1-3, x=0-6, y=1-7, z=1-2, x+y+z=4 when a=1, x+y+z=4 or 6 when a=2, and x+y+z=6 or 8 when a=3; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated iodine-containing etching compound capable of etching the silicon-containing film from the substrate.