The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2022
Filed:
Oct. 08, 2018
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Martin O'Toole, Saratoga Springs, NY (US);
Keith Donegan, Saratoga Springs, NY (US);
Brendan O'Brien, Ballston Spa, NY (US);
Hsueh-Chung Chen, Cohoes, NY (US);
Terry A. Spooner, Halfmoon, NY (US);
Craig Child, Gansevoort, NY (US);
Sean Reidy, Clifton Park, NY (US);
Ravi Prakash Srivastava, Clifton Park, NY (US);
Louis Lanzerotti, Charlotte, VT (US);
Atsushi Ogino, Fishkill, NY (US);
GlobalFoundries U.S. Inc., Santa Clara, CA (US);
Abstract
Methods of self-aligned multiple patterning. A hardmask is deposited over an interlayer dielectric layer. A mandrel is formed over the hardmask. A block mask is formed that covers a first lengthwise section of the mandrel and that exposes second and third lengthwise sections of the mandrel. After forming the block mask, the second and third lengthwise sections of the mandrel are removed to define a pattern including respective first and second mandrel lines that are separated from each other by the first lengthwise section of the mandrel. The first mandrel line and the second mandrel line expose respective portions of the hardmask, and the first lengthwise section of the mandrel line covers another portion of the hardmask. The pattern is transferred to the hardmask with an etching process, and subsequently transferred to the interlayer dielectric layer with another etching process.