The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2022
Filed:
Oct. 08, 2020
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hsiao-Lun Chang, Tainan, TW;
Chueh-Chi Kuo, Kaohsiung, TW;
Tsung-Yen Lee, Jhudong Township, Hsinchu County, TW;
Tzung-Chi Fu, Miaoli, TW;
Li-Jui Chen, Hsinchu, TW;
Po-Chung Cheng, Zhongpu Township, Chiayi County, TW;
Che-Chang Hsu, Taichung, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A reticle, a reticle container and a method for discharging static charges accumulated on a reticle are provided. The reticle includes a mask substrate, a reflective multilayer (ML) structure, a capping layer, an absorption structure and a conductive material structure. The mask substrate has a front-side surface and a back-side surface. The reflective ML structure is positioned over the front-side surface of mask substrate. The capping layer is positioned over the reflective ML structure. The absorption structure is positioned over the capping layer. The conductive material structure is positioned over a sidewall surface of the mask substrate and a sidewall surface of the absorption structure.