The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2022
Filed:
Oct. 24, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chen-Han Wang, Zhubei, TW;
Ding-Kang Shih, New Taipei, TW;
Chun-Hsiung Lin, Zhubei, TW;
Teng-Chun Tsai, Hsinchu, TW;
Zhi-Chang Lin, Zhubei, TW;
Akira Mineji, Hsinchu, TW;
Yao-Sheng Huang, Kaohsiung, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
The present disclosure describes an inner spacer structure for a semiconductor device and a method for forming the same. The method for forming the inner spacer structure in the semiconductor device can include forming a vertical structure over a substrate, forming a gate structure over a portion of the vertical structure, exposing sidewalls of the portion of the vertical structure, forming multiple spacers over the sidewalls of the portion of the vertical structure, and forming a void in each of the multiple spacers.