The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2021
Filed:
Sep. 18, 2019
Intel Corporation, Santa Clara, CA (US);
Mohit K. Haran, Hillsboro, OR (US);
Daniel James Bahr, Portland, OR (US);
Deepak S. Rao, Portland, OR (US);
Marvin Young Paik, Portland, OR (US);
Seungdo An, Portland, OR (US);
Debashish Basu, Beaverton, OR (US);
Kilhyun Bang, Portland, OR (US);
Jason W. Klaus, Portland, OR (US);
Reken Patel, Portland, OR (US);
Charles Henry Wallace, Portland, OR (US);
James Jeong, Beaverton, OR (US);
Ruth Amy Brain, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
An example via contact patterning method includes providing a pattern of alternating trench contacts and gates over a support structure. For each pair of adjacent trench contacts and gates, a trench contact is electrically insulated from an adjacent gate by a dielectric material and/or multiple layers of different dielectric materials, and the gates are recessed with respect to the trench contacts. The method further includes wrapping a protective layer of one or more dielectric materials, and a sacrificial helmet material on top of the trench contacts to protect them during the via contact patterning and etch processes for forming via contacts over one or more gates. Such a method may advantageously allow increasing the edge placement error margin for forming via contacts of metallization stacks.