Company Filing History:
Years Active: 2019-2023
Title: Deepak S Rao: Innovator in Contact Patterning Methods
Introduction
Deepak S Rao is a notable inventor based in Portland, OR (US). He has made significant contributions to the field of semiconductor technology, particularly in the area of contact patterning methods. With a total of 4 patents to his name, Rao continues to push the boundaries of innovation in his field.
Latest Patents
One of Rao's latest patents focuses on a via contact patterning method designed to increase the edge placement error margin. This method involves providing a pattern of alternating trench contacts and gates over a support structure. For each pair of adjacent trench contacts and gates, a trench contact is electrically insulated from an adjacent gate by a dielectric material and/or multiple layers of different dielectric materials. The gates are recessed with respect to the trench contacts. Additionally, the method includes wrapping a protective layer of one or more dielectric materials and a sacrificial helmet material on top of the trench contacts. This protective layer is crucial during the via contact patterning and etch processes for forming via contacts over one or more gates. Such a method may advantageously allow for an increased edge placement error margin for forming via contacts of metallization stacks.
Career Highlights
Deepak S Rao is currently employed at Intel Corporation, where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the capabilities of modern electronics.
Collaborations
Rao has collaborated with several talented individuals in his field, including Mohit K Haran and Charles Henry Wallace. These collaborations have further enriched his innovative contributions.
Conclusion
Deepak S Rao is a prominent figure in the realm of semiconductor innovations, with a focus on enhancing contact patterning methods. His work at Intel Corporation and his patented technologies reflect his commitment to advancing the industry.
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