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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11127567 B1

PDFFull Text
Date of Patent:
Sep. 21, 2021

Filed:

May. 04, 2020

Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity

Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Hu Kang, Tualatin, OR (US);

Adrien LaVoie, Newberg, OR (US);

Shankar Swaminathan, Beaverton, OR (US);

Jun Qian, Sherwood, OR (US);

Chloe Baldasseroni, Portland, OR (US);

Frank Pasquale, Tualatin, OR (US);

Andrew Duvall, Portland, OR (US);

Ted Minshall, Sherwood, OR (US);

Jennifer Petraglia, Portland, OR (US);

Karl Leeser, West Linn, OR (US);

David Smith, Lake Oswego, OR (US);

Sesha Varadarajan, Lake Oswego, OR (US);

Edward Augustyniak, Tualatin, OR (US);

Douglas Keil, West Linn, OR (US);

Assignee:

LAM RESEARCH CORPORATION, Fremont, CA (US);

Attorney:
Primary Examiner:

Rudy Zervigon

Int. Cl.
CPC ...
C23C 16/50 (2006.01); H01J 37/32 (2006.01); C23C 16/505 (2006.01); C23C 16/455 (2006.01); C23C 16/40 (2006.01); C23C 16/34 (2006.01); C23C 16/509 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3244 (2013.01); C23C 16/345 (2013.01); C23C 16/402 (2013.01); C23C 16/405 (2013.01); C23C 16/45565 (2013.01); C23C 16/505 (2013.01); C23C 16/509 (2013.01); H01J 37/32568 (2013.01); H01J 37/32623 (2013.01);
Abstract

A substrate processing system includes: a processing chamber defining a reaction volume; a showerhead including: a stem portion having one end connected adjacent to an upper surface of the processing chamber; and a base portion connected to an opposite end of the stem portion and extending radially outwardly from the stem portion, where the showerhead is configured to introduce gas into the reaction volume; a plasma generator configured to selectively generate RF plasma in the reaction volume; and a collar arranged around the stem portion of the showerhead between the base portion of the showerhead and the upper surface of the processing chamber. The collar includes one or more holes to supply purge gas from an inner cavity of the collar to between the base portion of the showerhead and the upper surface of the processing chamber.

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