The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2021
Filed:
Sep. 13, 2019
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yung-Chi Lin, Su-Lin, TW;
Hsin-Yu Chen, Taipei, TW;
Ming-Tsu Chung, Hsinchu, TW;
HsiaoYun Lo, Hsinchu, TW;
Hong-Ye Shih, New Taipei, TW;
Chia-Yin Chen, Hsinchu, TW;
Ku-Feng Yang, Baoshan Township, TW;
Tsang-Jiuh Wu, Hsinchu, TW;
Wen-Chih Chiou, Zhunan Township, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device includes a through-substrate via extending from a frontside to a backside of a semiconductor substrate. The through-substrate via includes a concave or a convex portion adjacent to the backside of the semiconductor substrate. An isolation film is formed on the backside of the semiconductor substrate. A conductive layer includes a first portion formed on the concave or convex portion of the through substrate via and a second portion formed on the isolation film. A passivation layer partially covers the conductive layer.