The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 22, 2021

Filed:

Oct. 23, 2018
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Jeng-Shyan Lin, Tainan, TW;

Dun-Nian Yaung, Taipei, TW;

Jen-Cheng Liu, Hsin-Chu, TW;

Hsun-Ying Huang, Tainan, TW;

Wei-Chih Weng, Tainan, TW;

Yu-Yang Shen, Kaohsiung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 21/78 (2006.01); H01L 23/528 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14634 (2013.01); H01L 21/76898 (2013.01); H01L 21/78 (2013.01); H01L 23/481 (2013.01); H01L 23/5283 (2013.01); H01L 24/00 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 27/1463 (2013.01); H01L 27/1469 (2013.01); H01L 27/14636 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01L 23/53295 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01);
Abstract

The present disclosure, in some embodiments, relates to a multi-dimensional integrated chip structure. The structure includes a first interconnect layer within a first dielectric structure on a first substrate, and a second interconnect layer within a second dielectric structure on a second substrate. A bonding structure is between the first dielectric structure and the second substrate. An inter-tier interconnect structure extends through the second substrate and between a top of the first interconnect layer and a bottom of the second interconnect layer. The inter-tier interconnect structure includes a first region having substantially vertical sidewalls extending through the second substrate and a second region below the first region and having tapered sidewalls surrounded by the bonding structure.


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