The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

Aug. 14, 2018
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chih-Hsuan Tai, Taipei, TW;

Hao-Yi Tsai, Hsinchu, TW;

Yu-Chih Huang, Hsinchu, TW;

Chia-Hung Liu, Hsinchu, TW;

Ting-Ting Kuo, Hsinchu, TW;

Ban-Li Wu, Hsinchu, TW;

Ying-Cheng Tseng, Tainan, TW;

Chi-Hui Lai, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 25/10 (2006.01); H01L 23/31 (2006.01); H01L 25/00 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/105 (2013.01); H01L 21/486 (2013.01); H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/568 (2013.01); H01L 23/3128 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/49827 (2013.01); H01L 25/50 (2013.01); H01L 24/16 (2013.01); H01L 24/48 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/48227 (2013.01); H01L 2225/1058 (2013.01);
Abstract

A package structure including a first redistribution layer, a semiconductor die, through insulator vias, an insulating encapsulant and a second redistribution layer. The first redistribution layer includes a dielectric layer, a conductive layer, and connecting portions electrically connected to the conductive layer. The dielectric layer has first and second surfaces, the connecting portions has a first side, a second side, and sidewalls joining the first side to the second side. The first side of the connecting portions is exposed from and coplanar with the first surface of the dielectric layer. The semiconductor die is disposed on the second surface of the dielectric layer. The through insulator vias are connected to the conductive layer. The insulating encapsulant is disposed on the dielectric layer and encapsulating the semiconductor die and the through insulator vias. The second redistribution layer is disposed on the semiconductor die and over the insulating encapsulant.


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