The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2021
Filed:
Mar. 31, 2017
Intel Corporation, Santa Clara, CA (US);
Van H. Le, Portland, OR (US);
Abhishek A. Sharma, Hillsboro, OR (US);
Ravi Pillarisetty, Portland, OR (US);
Gilbert W. Dewey, Beaverton, OR (US);
Shriram Shivaraman, Hillsboro, OR (US);
Tristan A. Tronic, Aloha, OR (US);
Sanaz Gardner, Portland, OR (US);
Tahir Ghani, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Substrates, assemblies, and techniques for an apparatus, where the apparatus includes a gate, where the gate includes a first gate side and a second gate side opposite to the first gate side, a gate dielectric on the gate, where the gate dielectric includes a first gate dielectric side and a second gate dielectric side opposite to the first gate dielectric side, a first dielectric, where the first dielectric abuts the first gate side, the first gate dielectric side, the second gate side, and the second gate dielectric side, a channel, where the gate dielectric is between the channel and the gate, a source coupled with the channel, and a drain coupled with the channel, where the first dielectric abuts the source and the drain. In an example, the first dielectric and the gate dielectric help insulate the gate from the channel, the source, and the drain.