The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 11, 2021

Filed:

Mar. 15, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chih-Hsuan Tai, Taipei, TW;

Hao-Yi Tsai, Hsinchu, TW;

Tsung-Hsien Chiang, Hsinchu, TW;

Yu-Chih Huang, Hsinchu, TW;

Chia-Hung Liu, Hsinchu, TW;

Ban-Li Wu, Hsinchu, TW;

Ying-Cheng Tseng, Tainan, TW;

Po-Chun Lin, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/367 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 23/528 (2006.01); H01L 21/56 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/56 (2013.01); H01L 21/76898 (2013.01); H01L 23/3171 (2013.01); H01L 23/3675 (2013.01); H01L 23/481 (2013.01); H01L 23/5283 (2013.01); H01L 24/09 (2013.01); H01L 24/17 (2013.01); H01L 24/33 (2013.01); H01L 24/73 (2013.01); H01L 2224/0231 (2013.01); H01L 2224/02373 (2013.01); H01L 2224/02379 (2013.01); H01L 2224/02381 (2013.01); H01L 2224/73204 (2013.01);
Abstract

A package structure includes a die, a TIV, a first encapsulant, a RDL structure, a thermal dissipation structure and a second encapsulant. The die has a first surface and a second surface opposite to each other. The TIV is laterally aside the die. The first encapsulant encapsulates sidewalls of the die and sidewalls of the TIV. The RDL structure is disposed on the first surface of the die and on the first encapsulant, electrically connected to the die and the TIV. The thermal dissipation structure is disposed over the second surface of die and electrically connected to the die through the TIV and the RDL structure. The second encapsulant encapsulates sidewalls of the thermal dissipation structure.


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