The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 2020

Filed:

Jun. 26, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Tsung-Ding Wang, Tainan, TW;

An-Jhih Su, Taoyuan, TW;

Chien Ling Hwang, Hsinchu, TW;

Jung Wei Cheng, Hsinchu, TW;

Hsin-Yu Pan, Taipei, TW;

Chen-Hua Yu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/04 (2006.01); H01L 23/42 (2006.01); H01L 23/367 (2006.01); H01L 23/00 (2006.01); H01L 23/10 (2006.01); H01L 21/56 (2006.01); H01L 25/065 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/04 (2013.01); H01L 21/563 (2013.01); H01L 23/10 (2013.01); H01L 23/3675 (2013.01); H01L 23/42 (2013.01); H01L 24/83 (2013.01); H01L 25/0657 (2013.01); H01L 23/49816 (2013.01); H01L 24/02 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/14 (2013.01); H01L 24/16 (2013.01); H01L 24/17 (2013.01); H01L 24/27 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); H01L 24/81 (2013.01); H01L 2224/023 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/11616 (2013.01); H01L 2224/14181 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/17181 (2013.01); H01L 2224/26145 (2013.01); H01L 2224/26175 (2013.01); H01L 2224/27013 (2013.01); H01L 2224/2745 (2013.01); H01L 2224/27452 (2013.01); H01L 2224/27462 (2013.01); H01L 2224/27602 (2013.01); H01L 2224/27616 (2013.01); H01L 2224/27622 (2013.01); H01L 2224/29011 (2013.01); H01L 2224/2929 (2013.01); H01L 2224/29124 (2013.01); H01L 2224/29138 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/29166 (2013.01); H01L 2224/29181 (2013.01); H01L 2224/29187 (2013.01); H01L 2224/29191 (2013.01); H01L 2224/29294 (2013.01); H01L 2224/29309 (2013.01); H01L 2224/29387 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/33181 (2013.01); H01L 2224/33505 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/83007 (2013.01); H01L 2224/83051 (2013.01); H01L 2224/83104 (2013.01); H01L 2224/83191 (2013.01); H01L 2224/83192 (2013.01); H01L 2224/83193 (2013.01); H01L 2224/83203 (2013.01); H01L 2224/83815 (2013.01); H01L 2224/83855 (2013.01); H01L 2224/83862 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06548 (2013.01); H01L 2225/06589 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/15153 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/163 (2013.01); H01L 2924/16152 (2013.01); H01L 2924/3511 (2013.01);
Abstract

An apparatus comprising a first substrate, a dam structure disposed on a first side of the first substrate, and an integrated circuit (IC) memory chip coupled to the first side of the first substrate by a plurality of first conductive members. A second substrate is coupled to a second side of the first substrate by a plurality of second conductive members. A lid coupled to the second substrate encloses the IC memory chip and the first substrate. A thermal interface material (TIM) is coupled between the lid and the dam structure.


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