The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2020

Filed:

Jul. 17, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Wei-Chih Chen, Taipei, TW;

Hung-Jui Kuo, Hsinchu, TW;

Yu-Hsiang Hu, Hsinchu, TW;

Sih-Hao Liao, New Taipei, TW;

Hung-Chun Cho, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 25/065 (2006.01); H01L 23/31 (2006.01); H01L 23/538 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 21/48 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0655 (2013.01); H01L 21/4857 (2013.01); H01L 21/56 (2013.01); H01L 23/3128 (2013.01); H01L 23/5383 (2013.01); H01L 24/13 (2013.01); H01L 24/18 (2013.01); H01L 2224/11821 (2013.01); H01L 2224/11822 (2013.01); H01L 2224/1369 (2013.01);
Abstract

A semiconductor package includes a first die, a second die, a molding compound and a redistribution structure. The first die has a first conductive pillar and a first complex compound sheath surrounding and covering a sidewall of the first conductive pillar. The second die has a second conductive pillar and a protection layer laterally surrounding the second conductive pillar. The molding compound laterally surrounds and wraps around the first and second dies, and is in contact with the first complex compound sheath of the first die. The redistribution structure is disposed on the first and second dies and the molding compound. The redistribution structure has a first via portion embedded in the first polymer dielectric layer and a second via portion embedded in the second polymer dielectric layer. A base angle of the first via portion is greater than a base angle of the second via portion.


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