The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2020
Filed:
Jul. 16, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Pang-Sheng Chang, Hsinchu, TW;
Yu-Feng Yin, Hsinchu County, TW;
Chao-Hsun Wang, Taoyuan County, TW;
Kuo-Yi Chao, Hsinchu, TW;
Fu-Kai Yang, Hsinchu, TW;
Mei-Yun Wang, Hsin-Chu, TW;
Feng-Yu Chang, Kaohsiung, TW;
Chen-Yuan Kao, Hsinchu County, TW;
Chia-Yang Hung, Kaohsiung, TW;
Chia-Sheng Chang, Hsinchu, TW;
Shu-Huei Suen, Hsinchu County, TW;
Jyu-Horng Shieh, Hsin-Chu, TW;
Sheng-Liang Pan, Hsin-Chu, TW;
Jack Kuo-Ping Kuo, Hsinchu, TW;
Shao-Jyun Wu, New Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes forming a metal gate structure, wherein the metal gate structure includes a gate dielectric layer and a gate electrode; performing a surface treatment to a top surface of the metal gate structure, wherein the surface treatment converts a top portion of the gate electrode to an oxidation layer; forming a conductive layer above the gate electrode, wherein the forming of the conductive layer includes substituting oxygen in the oxidation layer with a metallic element; and forming a contact feature above the metal gate structure, wherein the contact feature is in direct contact with the conductive layer.