The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2020

Filed:

Apr. 10, 2019
Applicant:

Asml Netherlands B.v., Veldhoven, NL;

Inventors:
Assignee:

ASML Netherlands B.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/95 (2006.01); G01B 11/14 (2006.01); G01B 11/02 (2006.01); G01N 21/956 (2006.01); G03F 7/20 (2006.01); H01L 21/66 (2006.01); G05B 19/418 (2006.01); G01B 11/00 (2006.01); G01B 11/26 (2006.01);
U.S. Cl.
CPC ...
G01N 21/9501 (2013.01); G01B 11/002 (2013.01); G01B 11/02 (2013.01); G01B 11/14 (2013.01); G01B 11/26 (2013.01); G01N 21/956 (2013.01); G01N 21/95607 (2013.01); G03F 7/70508 (2013.01); G03F 7/70625 (2013.01); G03F 7/70633 (2013.01); G05B 19/41875 (2013.01); H01L 22/20 (2013.01); G05B 2219/37224 (2013.01); Y02P 90/20 (2015.11); Y02P 90/22 (2015.11);
Abstract

In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produceddefined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is usedto control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stackedto at least partially recompose the measurement results according to the sample plan.


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