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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10741537 B1

PDFFull Text
Date of Patent:
Aug. 11, 2020

Filed:

Oct. 05, 2017

Semiconductor structure and manufacturing method thereof

Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Hsiang-Tai Lu, Hsinchu County, TW;

Shuo-Mao Chen, New Taipei, TW;

Mill-Jer Wang, Hsinchu, TW;

Feng-Cheng Hsu, New Taipei, TW;

Chao-Hsiang Yang, Hsinchu, TW;

Shin-Puu Jeng, Hsinchu, TW;

Cheng-Yi Hong, Hsinchu, TW;

Chih-Hsien Lin, Tai-Chung, TW;

Dai-Jang Chen, New Taipei, TW;

Chen-Hua Lin, Yunlin County, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COOMPANY LTD., Hsinchu, TW;

Attorneys:

WPAT, P.C., Intellectual Property Attorneys

Anthony King

Primary Examiner:

David A Zarneke

Int. Cl.
CPC ...
H01L 25/00 (2006.01); H01L 23/538 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 25/10 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/66 (2006.01); H01L 23/498 (2006.01); H01L 23/522 (2006.01); H01L 23/053 (2006.01);
U.S. Cl.
CPC ...
H01L 25/50 (2013.01); H01L 21/486 (2013.01); H01L 21/4853 (2013.01); H01L 21/565 (2013.01); H01L 22/20 (2013.01); H01L 22/32 (2013.01); H01L 23/3135 (2013.01); H01L 23/3185 (2013.01); H01L 23/5386 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 25/105 (2013.01); H01L 21/4857 (2013.01); H01L 21/563 (2013.01); H01L 22/14 (2013.01); H01L 23/053 (2013.01); H01L 23/3128 (2013.01); H01L 23/49827 (2013.01); H01L 23/49838 (2013.01); H01L 23/5226 (2013.01); H01L 23/5383 (2013.01); H01L 23/5384 (2013.01); H01L 23/5389 (2013.01); H01L 23/562 (2013.01); H01L 24/23 (2013.01); H01L 24/24 (2013.01); H01L 2224/02379 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/214 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/18161 (2013.01); H01L 2924/3511 (2013.01); Y02P 80/30 (2015.11);
Abstract

A method of manufacturing a semiconductor structure includes forming a redistribution layer (RDL); forming a conductive member over the RDL; performing a first electrical test through the conductive member; disposing a first die over the RDL; performing a second electrical test through the conductive member; and disposing a second die over the first die and the conductive member.

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