The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2020
Filed:
Jul. 06, 2018
Tokyo Electron Limited, Tokyo, JP;
Taiki Kato, Nirasaki, JP;
Hisashi Higuchi, Nirasaki, JP;
Kosuke Yamamoto, Nirasaki, JP;
Ayuta Suzuki, Nirasaki, JP;
Kazuyoshi Matsuzaki, Nirasaki, JP;
Yuji Seshimo, Oshu, JP;
Susumu Takada, Nirasaki, JP;
Yoshihiro Takezawa, Nirasaki, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device having a metal oxide film with workpiece accommodated in a chamber, includes: supplying a precursor gas containing a metal complex into the chamber to form a precursor layer on the workpiece from the precursor gas; supplying an oxidizing gas into the chamber to oxidize the precursor layer so that a metal oxide layer is formed, the oxidizing gas being a gas containing HO or a gas having a functional group containing hydrogen atoms in the metal complex and containing an oxidant to generate HO by reaction with the functional group; supplying an HO removal gas containing alcohols or amines into the chamber to remove HO adsorbed onto the metal oxide layer; and executing a plurality of cycles each including the supplying a precursor gas and the supplying an oxidizing gas. At least some of the cycles includes the supplying an HO removal gas.