IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10700009 B1

PDFFull Text
Date of Patent:
Jun. 30, 2020

Filed:

Oct. 01, 2018

Ruthenium metal feature fill for interconnects

Applicant:

Tokyo Electron Limited, Minato-ku, Tokyo, JP;

Inventors:

Kai-Hung Yu, Watervliet, NY (US);

Nicholas Joy, Mechanicville, NY (US);

Eric Chih Fang Liu, Guilderland, NY (US);

David L. O'Meara, Albany, NY (US);

David Rosenthal, Fishkill, NY (US);

Masanobu Igeta, Hillsboro, OR (US);

Cory Wajda, Sand Lake, NY (US);

Gerrit J. Leusink, Rexford, NY (US);

Assignee:

Tokyo Electron Limited, Tokyo, JP;

Attorney:
Primary Examiner:

Bradley Smith

Int. Cl.
CPC ...
H01L 21/283 (2006.01); H01L 23/532 (2006.01); H01L 21/285 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); C23C 16/16 (2006.01); C23C 16/56 (2006.01); C23C 16/455 (2006.01); C23C 16/04 (2006.01); H01L 23/522 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53252 (2013.01); C23C 16/045 (2013.01); C23C 16/16 (2013.01); C23C 16/45553 (2013.01); C23C 16/56 (2013.01); H01L 21/28568 (2013.01); H01L 21/32136 (2013.01); H01L 21/76876 (2013.01); H01L 21/76882 (2013.01); H01L 21/3212 (2013.01); H01L 21/7684 (2013.01); H01L 23/5226 (2013.01); H01L 23/53257 (2013.01);
Abstract

A method is provided for void-free Ru metal filling of features in a substrate. The method includes providing a substrate containing features, depositing a Ru metal layer in the features, removing the Ru metal layer from a field area around an opening of the features, and depositing additional Ru metal in the features, where the additional Ru metal is deposited in the features at a higher rate than on the field area. According to one embodiment, the additional Ru metal is deposited until the features are fully filled with Ru metal.

Find Patent Forward Citations

Loading…