The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2020
Filed:
Apr. 02, 2018
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Mirng-Ji Lii, Sinpu Township, TW;
Chung-Shi Liu, Hsinchu, TW;
Chin-Yu Ku, Hsinchu, TW;
Hung-Jui Kuo, Hsinchu, TW;
Alexander Kalnitsky, San Francisco, CA (US);
Ming-Che Ho, Tainan, TW;
Yi-Wen Wu, Xizhi, TW;
Ching-Hui Chen, Hsinchu, TW;
Kuo-Chio Liu, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method includes forming a first dielectric layer over a conductive pad, forming a second dielectric layer over the first dielectric layer, and etching the second dielectric layer to form a first opening, with a top surface of the first dielectric layer exposed to the first opening. A template layer is formed to fill the first opening. A second opening is then formed in the template layer and the first dielectric layer, with a top surface of the conductive pad exposed to the second opening. A conductive pillar is formed in the second opening.