The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2020

Filed:

Mar. 30, 2017
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yu-Tien Shen, Hsinchu, TW;

Chi-Cheng Hung, Miaoli County, TW;

Chin-Hsiang Lin, Hsin-chu, TW;

Chien-Wei Wang, Zhubei, TW;

Ching-Yu Chang, Yilang County, TW;

Chih-Yuan Ting, Taipei, TW;

Kuei-Shun Chen, Hsinchu, TW;

Ru-Gun Liu, Hsinchu County, TW;

Wei-Liang Lin, Hsin-Chu, TW;

Ya Hui Chang, Hsinchu, TW;

Yuan-Hsiang Lung, Hsinchu, TW;

Yen-Ming Chen, Chu-Pei, TW;

Yung-Sung Yen, New Taipei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 21/311 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/26586 (2013.01); H01L 21/0337 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01);
Abstract

A method for semiconductor manufacturing includes providing a substrate and a patterning layer over the substrate; forming a hole in the patterning layer; applying a first directional etching along a first direction to inner sidewalls of the hole; and applying a second directional etching along a second direction to the inner sidewalls of the hole, wherein the second direction is different from the first direction.


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