The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2020
Filed:
Dec. 21, 2018
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Alexander Kalnitsky, San Francisco, CA (US);
Yi-Yang Lei, Taichung, TW;
Hsi-Ching Wang, Taoyuan, TW;
Cheng-Yu Kuo, Kaohsiung, TW;
Tsung Lung Huang, Tainan, TW;
Ching-Hua Hsieh, Hsinchu, TW;
Chung-Shi Liu, Hsinchu, TW;
Chen-Hua Yu, Hsinchu, TW;
Chin-Yu Ku, Hsinchu, TW;
De-Dui Liao, Hsin-Chu, TW;
Kuo-Chio Liu, Hsinchu, TW;
Kai-Di Wu, Tainan, TW;
Kuo-Pin Chang, Tainan, TW;
Sheng-Pin Yang, Kaohsiung, TW;
Isaac Huang, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A method of manufacturing a semiconductor structure includes receiving a first substrate including an IMD layer disposed over the first substrate and a plurality of conductive bumps disposed in the IMD layer; receiving a second substrate; disposing a patterned adhesive over the first substrate, wherein at least a portion of the IMD layer is exposed through the patterned adhesive; and bonding the first substrate with the second substrate, wherein a top surface of the at least portion of the IMD layer is exposed through the patterned adhesive after bonding the first substrate with the second substrate.