The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2019

Filed:

Oct. 06, 2017
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chang-Pin Huang, Taoyuan, TW;

Hsien-Ming Tu, Hsinchu, TW;

Ching-Jung Yang, Taoyuan, TW;

Shih-Wei Liang, Taichung, TW;

Hung-Yi Kuo, Taipei, TW;

Yu-Chia Lai, Miaoli, TW;

Hao-Yi Tsai, Hsinchu, TW;

Chung-Shi Liu, Hsinchu, TW;

Chen-Hua Yu, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 23/5226 (2013.01); H01L 23/53228 (2013.01); H01L 24/02 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 21/568 (2013.01); H01L 2224/02372 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/05015 (2013.01); H01L 2224/05024 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/13026 (2013.01); H01L 2224/1413 (2013.01); H01L 2924/18162 (2013.01); H01L 2924/3512 (2013.01); H01L 2924/35121 (2013.01); H01L 2924/37001 (2013.01);
Abstract

A method of manufacturing a semiconductor structure include: providing a die including a die pad disposed over the die; disposing a conductive member over the die pad of the die; forming a molding surrounding the die and the conductive member; disposing a dielectric layer over the molding, the die and the conductive member; and forming an interconnect structure including a land portion and a plurality of via portions. The land portion is disposed over the dielectric layer, the plurality of via portions are disposed over the conductive member and protruded from the land portion to the conductive member through the dielectric layer, and each of the plurality of via portions at least partially contacts with the conductive member.


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