The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2019
Filed:
Apr. 25, 2014
Novellus Systems, Inc., Fremont, CA (US);
Jason Dirk Haverkamp, Scotia, NY (US);
Pramod Subramonium, Beaverton, OR (US);
Joseph L. Womack, Tigard, OR (US);
Dong Niu, West Linn, OR (US);
Keith Fox, Tigard, OR (US);
John B. Alexy, West Linn, OR (US);
Patrick G. Breiling, Portland, OR (US);
Jennifer L. Petraglia, Portland, OR (US);
Mandyam A. Sriram, San Jose, CA (US);
George Andrew Antonelli, Portland, OR (US);
Bart J. van Schravendijk, Cupertino, CA (US);
Novellus Systems, Inc., Fremont, CA (US);
Abstract
An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.