The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2018

Filed:

Oct. 23, 2017
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Alexander Kalnitsky, San Francisco, CA (US);

Yi-Yang Lei, Taichung, TW;

Hsi-Ching Wang, Taoyuan, TW;

Cheng-Yu Kuo, Kaohsiung, TW;

Tsung Lung Huang, Tainan, TW;

Ching-Hua Hsieh, Hsinchu, TW;

Chung-Shi Liu, Hsinchu, TW;

Chen-Hua Yu, Hsinchu, TW;

Chin-Yu Ku, Hsinchu, TW;

De-Dui Liao, Hsin-Chu, TW;

Kuo-Chio Liu, Hsinchu, TW;

Kai-Di Wu, Tainan, TW;

Kuo-Pin Chang, Tainan, TW;

Sheng-Pin Yang, Kaohsiung, TW;

Isaac Huang, Tainan, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 23/00 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 24/83 (2013.01); H01L 21/6835 (2013.01); H01L 21/78 (2013.01); H01L 24/73 (2013.01); H01L 24/92 (2013.01); H01L 24/94 (2013.01); H01L 24/03 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68318 (2013.01); H01L 2221/68327 (2013.01); H01L 2224/03002 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/8385 (2013.01); H01L 2224/83201 (2013.01); H01L 2224/921 (2013.01); H01L 2224/94 (2013.01); H01L 2924/06 (2013.01); H01L 2924/07025 (2013.01);
Abstract

A method of manufacturing a semiconductor structure, including receiving a first substrate including a plurality of conductive bumps disposed over the first substrate; receiving a second substrate; disposing an adhesive over the first substrate; removing a portion of the adhesive to expose at least one of the plurality of conductive bumps; and bonding the first substrate with the second substrate.


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