The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
Jun. 05, 2017
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hsiao Yun Lo, Hsin-Chu, TW;
Lin-Chih Huang, Hsin-Chu, TW;
Tasi-Jung Wu, Hsin-Chu, TW;
Hsin-Yu Chen, Taipei, TW;
Yung-Chi Lin, Su-Lin, TW;
Ku-Feng Yang, Baoshan Township, TW;
Tsang-Jiuh Wu, Hsinchu, TW;
Wen-Chih Chiou, Zhunan Township, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method includes depositing a dielectric layer over a substrate, patterning the dielectric layer to form a first opening and a second opening, wherein a width of the second opening is greater than a width of the first opening, forming a first metal layer over the dielectric layer, wherein a planar surface of the first metal layer in the second opening is lower than a top surface of the dielectric layer, forming a second metal layer in a conformal manner over the first metal layer, wherein a material of the first metal layer is different from a material of the second metal layer and applying a polishing process to the first metal layer and the second metal layer until the dielectric layer is exposed.