The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
Feb. 09, 2017
Tokyo Electron Limited, Minato-ku, Tokyo, JP;
Kai-Hung Yu, Watervliet, NY (US);
Manabu Oie, Watervliet, NY (US);
Kaoru Maekawa, Albany, NY (US);
Cory Wajda, Sand Lake, NY (US);
Gerrit J. Leusink, Rexford, NY (US);
Yuuki Kikuchi, Nirasaki, JP;
Hiroaki Kawasaki, Nirasaki, JP;
Hiroyuki Nagai, Kai, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
Methods for integration of conformal barrier layers and Ru metal liners with Cu metallization in semiconductor manufacturing are described in several embodiments. According to one embodiment, the method includes providing a substrate containing a recessed feature, depositing a barrier layer in the recessed feature, depositing a Ru metal liner on the barrier layer, and exposing the substrate to an oxidation source gas to oxidize the barrier layer through the Ru metal liner. The method further includes filling the recessed feature with CuMn metal using an ionized physical vapor deposition (IPVD) process, heat-treating the substrate to diffuse Mn from the CuMn metal to the oxidized barrier layer, and reacting the diffused Mn with the oxidized barrier layer to form a Mn-containing diffusion barrier.