Watervliet, NY, United States of America

Manabu Oie


Average Co-Inventor Count = 8.5

ph-index = 2

Forward Citations = 6(Granted Patents)


Location History:

  • Albany, NY (US) (2017)
  • Watervliet, NY (US) (2018)

Company Filing History:


Years Active: 2017-2018

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2 patents (USPTO):

Title: Manabu Oie: Innovator in Semiconductor Manufacturing

Introduction

Manabu Oie is a notable inventor based in Watervliet, NY (US). He has made significant contributions to the field of semiconductor manufacturing, particularly in the integration of barrier layers and metal liners.

Latest Patents

Oie holds 2 patents that focus on advanced methods for semiconductor fabrication. His first patent describes the integration of a self-forming barrier layer and a ruthenium metal liner in copper metallization. This method involves providing a substrate with a recessed feature, depositing a barrier layer, and then a Ru metal liner. The process includes oxidizing the barrier layer through the Ru metal liner and filling the feature with CuMn metal using an ionized physical vapor deposition (IPVD) process. The second patent details the integration of atomic layer deposition (ALD) of barrier layers and chemical vapor deposition (CVD) of Ru liners for void-free copper filling in narrow recessed features.

Career Highlights

Manabu Oie is currently employed at Tokyo Electron Limited, where he continues to innovate in semiconductor technologies. His work has been instrumental in enhancing the efficiency and reliability of semiconductor devices.

Collaborations

Oie has collaborated with notable colleagues such as Kai-Hung Yu and Cory Wajda, contributing to advancements in semiconductor manufacturing techniques.

Conclusion

Manabu Oie's contributions to semiconductor manufacturing through his innovative patents and collaborations highlight his role as a key figure in the industry. His work continues to influence the development of advanced semiconductor technologies.

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