Tokyo Electron Limited

Manabu Oie

Cory Wajda

Kai-Hung Yu

Kaoru Maekawa

Tadahiro Ishizaka

Gerrit J Leusink

Toshio Hasegawa

Gert J Leusink

Hiroyuki Nagai

Steven Consiglio

Hiroaki Kawasaki

Fumitaka Amano

Yuuki Kikuchi

Methods for integration of conformal barrier layers and Ru metal liners with Cu metallization in semiconductor manufacturing are described in several embodiments. According to one embodiment, the method includes providing a substrate containing a recessed feature, depositing a barrier layer in the recessed feature, depositing a Ru metal liner on the barrier layer, and exposing the substrate to an oxidation source gas to oxidize the barrier layer through the Ru metal liner. The method further includes filling the recessed feature with CuMn metal using an ionized physical vapor deposition (IPVD) process, heat-treating the substrate to diffuse Mn from the CuMn metal to the oxidized barrier layer, and reacting the diffused Mn with the oxidized barrier layer to form a Mn-containing diffusion barrier.

Integration of a self-forming barrier layer and a ruthenium metal liner in copper metallization

Methods for integration of atomic layer deposition (ALD) of barrier layers and chemical vapor deposition (CVD) of Ru liners for Cu filling of narrow recessed features for semiconductor devices are disclosed in several embodiments. According to one embodiment, the method includes providing a substrate containing a recessed feature, depositing a conformal barrier layer by ALD in the recessed feature, where the barrier layer contains TaN or TaAlN, depositing a conformal Ru liner by CVD on the barrier layer, and filling the recessed feature with Cu metal.

Integration of ALD barrier layer and CVD Ru liner for void-free Cu filling

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Watervliet, NY, United States of America

Manabu Oie