The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2018
Filed:
Mar. 14, 2016
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chen-Hua Yu, Hsinchu, TW;
Hung-Pin Chang, Taipei County, TW;
Yung-Chi Lin, Su-Lin, TW;
Chia-Lin Yu, Sigang Township, TW;
Jui-Pin Hung, Hsinchu, TW;
Chien Ling Hwang, Hsinchu, TW;
Taiwan Semicondutor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of making a semiconductor device is provided including forming a first opening and a second opening in a first surface of a substrate. A conductive material is formed in the first opening and in the second opening and over the first surface in the first region of the substrate between the openings. A thickness of the substrate may be reduced from a second surface of the substrate, opposite the first surface, to a third surface opposite the first surface which exposes the conductive material in the first opening and the conductive material in the second opening. A light emitting diode (LED) device is connected to the third surface of the substrate.