The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2018
Filed:
Apr. 20, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Meng-Fu Shih, Nantou County, TW;
Cheng-Lin Huang, Hsinchu, TW;
Chien-Chen Li, Hsinchu, TW;
Che-Jung Chu, Hsinchu, TW;
Wen-Ming Chen, Zhunan Township, Miaoli County, TW;
Kuo-Chio Liu, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for forming a semiconductor device structure is provided. The method includes providing a semiconductor structure. The semiconductor structure has a central portion and a peripheral portion surrounding the central portion. The method includes forming first conductive bumps and dummy conductive bumps over a surface of the semiconductor structure. The first conductive bumps are over the central portion and electrically connected to the semiconductor structure. The dummy conductive bumps are over the peripheral portion and electrically insulated from the semiconductor structure. The first conductive bumps each have a first thickness and a first width. The dummy conductive bumps each have a second thickness and a second width. The second thickness is less than the first thickness. The second width is greater than the first width.