Hsinchu, Taiwan

Zhuo-Cang Yang

This inventor holds 4 USPTO granted patents and 1 published patent application. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2016-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zhuo-Cang Yang. Retrieved from https://idiyas.com/inventor/zhuo-cang-yang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 4 

% Patents Active = 75.0

Average Co-Inventor Count = 3.2

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2016-2022

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4 patents (USPTO):Explore Patents

Title: Zhuo-Cang Yang: Innovator in Semiconductor Technology

Introduction

Zhuo-Cang Yang is an inventor based in Hsinchu City, Taiwan. He is known for his contributions to semiconductor technology, particularly in the development of innovative semiconductor devices. Although he currently holds no granted patents, his work in this field is noteworthy.

Latest Patent Applications

Zhuo-Cang Yang has filed a patent application for a semiconductor device and method of making it. The application describes a semiconductor device that includes a semiconductor body and a transistor. The transistor features a drain region within the semiconductor body, a first doped region in the drain region, a source region in the semiconductor body, and a second doped region adjacent to the source region. Additionally, there is a third doped region positioned between the first and second doped regions. This third doped region consists of multiple portions with varying concentrations of dopants, which are crucial for the device's functionality.

Conclusion

Zhuo-Cang Yang's work in semiconductor technology highlights his innovative approach to device design, even in the absence of granted patents. His contributions may pave the way for future advancements in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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