The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9269616 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 23, 2016

Filed:

Jan. 13, 2014
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;

Inventors:

Zhuo-Cang Yang, Hsinchu, TW;

Chih-Kuan Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 21/768 (2006.01); H01L 29/417 (2006.01); H01L 27/12 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); H01L 27/1203 (2013.01); H01L 27/1207 (2013.01); H01L 29/4175 (2013.01); H01L 27/0629 (2013.01); H01L 27/0647 (2013.01);
Abstract

Embodiments of a semiconductor device structure and a method of forming a semiconductor device structure are provided. The semiconductor device structure includes an insulating layer having a top surface, a bottom surface and a side surface. The semiconductor device structure also includes a first semiconductor substrate formed over the bottom surface of the first insulating layer. The semiconductor device structure further includes a conductive feature formed only adjacent to the side surface of the insulating layer on the first semiconductor substrate. In addition, the semiconductor device structure includes a second semiconductor substrate formed over the top surface of the insulating layer. The second semiconductor substrate includes a device-forming region formed directly over the insulating layer such that a projection region of the device-forming region is positioned inside the insulating layer.


Find Patent Forward Citations

Yang, Zhuo-Cang. (2016). Semiconductor device structure and method of forming (U.S. Patent No. 9269616). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9269616

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