Singapore, Singapore

Zhongxiu Yang

USPTO Granted Patents = 1 

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Innovations of Zhongxiu Yang in Semiconductor Technology

Introduction: Zhongxiu Yang is a notable inventor based in Singapore, recognized for his contributions to semiconductor technology. He has developed innovative solutions that enhance the performance and reliability of semiconductor structures. His work is particularly significant in the field of deep trench isolation structures.

Latest Patents: Zhongxiu Yang holds a patent for "Deep trench isolation structures with a substrate connection." This patent describes semiconductor structures that include a deep trench isolation structure and methods for forming such structures. The semiconductor structure features a semiconductor substrate with a device region, complemented by a deep trench isolation structure. This structure consists of a first portion, a second portion adjacent to the first, and a conductor layer in both portions. The conductor layer in the first portion surrounds the device region, while the second portion defines an electrical connection to the semiconductor substrate. He has 1 patent to his name.

Career Highlights: Zhongxiu Yang is currently employed at Globalfoundries Singapore Pte. Ltd., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and reliable.

Collaborations: Throughout his career, Zhongxiu Yang has collaborated with talented individuals such as Jianbo Zhou and Shiang Yang Ong. These collaborations have fostered innovation and have contributed to the successful development of various semiconductor technologies.

Conclusion: Zhongxiu Yang's contributions to semiconductor technology, particularly through his patented innovations, highlight his role as a key figure in the industry. His work continues to influence the development of advanced semiconductor structures, paving the way for future innovations.

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