Globalfoundries Singapore Pte. Ltd.

Zhongxiu Yang

Shiang Yang Ong

Namchil Mun

Jianbo Zhou

Hung Chang Liao

Semiconductor structures including a deep trench isolation structure and methods of forming a semiconductor structure including a deep trench isolation structure. The semiconductor structure includes a semiconductor substrate having a device region, and a deep trench isolation structure in the semiconductor substrate. The deep trench isolation structure further includes a first portion, a second portion adjacent to the first portion, and a conductor layer in the first portion and the second portion. The conductor layer in the first portion of the deep trench isolation structure surrounds the device region. The conductor layer in the second portion of the deep trench isolation structure defines an electrical connection to the semiconductor substrate.

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Singapore, Singapore

Zhongxiu Yang