Zhiqing Li

Title: Zhiqing Li: Innovator in Semiconductor Technology

Introduction

Zhiqing Li is a prominent inventor based in Singapore, known for his contributions to semiconductor technology. With a total of 3 patents, he has made significant advancements in the field, particularly in the design and fabrication of MOS devices.

Latest Patents

His latest patents focus on the development of MOS with recessed lightly-doped drain (LDD) regions. These innovations involve using high implant energy in devices with reduced thickness poly-silicon layers and source/drain junctions. The embodiments of his patents include forming an oxide layer on a substrate surface, followed by a poly-silicon layer over the oxide layer. Additionally, he defines a gate region by creating first and second trenches through the oxide and poly-silicon layers, implanting a dopant in the LDD region through these trenches, and forming spacers on opposite side surfaces of the gate region.

Career Highlights

Zhiqing Li has worked with notable organizations such as Globalfoundries Singapore Pte. Ltd. and Nanyang Technological University. His experience in these institutions has allowed him to refine his expertise in semiconductor technologies and contribute to various innovative projects.

Collaborations

Throughout his career, Zhiqing has collaborated with talented individuals, including Guowei Zhang and Purakh Raj Verma. These collaborations have further enhanced his work and led to significant advancements in the field.

Conclusion

Zhiqing Li's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the industry and pave the way for future innovations.