Globalfoundries Singapore Pte. Ltd.

Nanyang Technological University

Zhiqing Li

Purakh Raj Verma

Guowei Zhang

Xiaowei Sun

Ping Shum

LDD regions are provided with high implant energy in devices with reduced thickness poly-silicon layers and source/drain junctions. Embodiments include forming an oxide layer on a substrate surface, forming a poly-silicon layer over the oxide layer, forming first and second trenches through the oxide and poly-silicon layers and below the substrate surface, defining a gate region therebetween, implanting a dopant in a LDD region through the first and second trenches, forming spacers on opposite side surfaces of the gate region and extending into the first and second trenches, and implanting a dopant in a source/drain region below each of the first and second trenches.

MOS with recessed lightly-doped drain

A split drain magnetic field effect transistor (MAGFET) includes at least one supplemental gate to exert a lateral electrical field in the channel of the MAGFET. Connection of the supplemental gate in feedback with one of the two drain contacts allows the MAGFET to act as a latch sensitive to the presence of an external magnetic field. Preferably, the MAGFET includes two laterally spaced supplemental gates, allowing for the detection of an external magnetic field and its orientation.

Growing community of inventors

Singapore, Singapore

Zhiqing Li