The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2007
Filed:
Dec. 05, 2003
Applicants:
Zhiqing LI, Singapore, SG;
Xiaowei Sun, Singapore, SG;
Ping Shum, Singapore, SG;
Inventors:
Assignee:
Nanyang Technological University, Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01);
U.S. Cl.
CPC ...
Abstract
A split drain magnetic field effect transistor (MAGFET) includes at least one supplemental gate to exert a lateral electrical field in the channel of the MAGFET. Connection of the supplemental gate in feedback with one of the two drain contacts allows the MAGFET to act as a latch sensitive to the presence of an external magnetic field. Preferably, the MAGFET includes two laterally spaced supplemental gates, allowing for the detection of an external magnetic field and its orientation.