The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2016

Filed:

Jul. 09, 2014
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Guowei Zhang, Singapore, SG;

Purakh Raj Verma, Singapore, SG;

Zhiqing Li, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 27/088 (2006.01); H01L 21/265 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7834 (2013.01); H01L 21/823418 (2013.01); H01L 21/823462 (2013.01); H01L 21/823814 (2013.01); H01L 21/823857 (2013.01); H01L 27/088 (2013.01); H01L 29/6659 (2013.01); H01L 29/66636 (2013.01); H01L 29/7835 (2013.01); H01L 21/26586 (2013.01); H01L 29/665 (2013.01);
Abstract

LDD regions are provided with high implant energy in devices with reduced thickness poly-silicon layers and source/drain junctions. Embodiments include forming an oxide layer on a substrate surface, forming a poly-silicon layer over the oxide layer, forming first and second trenches through the oxide and poly-silicon layers and below the substrate surface, defining a gate region therebetween, implanting a dopant in a LDD region through the first and second trenches, forming spacers on opposite side surfaces of the gate region and extending into the first and second trenches, and implanting a dopant in a source/drain region below each of the first and second trenches.


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