San Jose, CA, United States of America

Zhaoqiang Bai


Average Co-Inventor Count = 4.8

ph-index = 4

Forward Citations = 24(Granted Patents)


Company Filing History:


Years Active: 2020-2021

where 'Filed Patents' based on already Granted Patents

7 patents (USPTO):

Title: Zhaoqiang Bai – Innovator in Phase Change Memory Technologies

Introduction

Zhaoqiang Bai, based in San Jose, CA, is a prominent inventor known for his significant contributions to the field of phase change memory technologies. With a remarkable portfolio of seven patents, Bai's inventive prowess has led to advancements that enhance data storage technologies and improve memory efficiency.

Latest Patents

Bai's latest patents reflect his innovative approach in crystallization techniques for phase change memories. One of his notable inventions involves a two-step SET pulse that significantly improves the crystallization process of phase change materials. The method entails applying a first lower SET pulse to allow the material to dwell at 600K to promote nucleation, followed by a second higher SET pulse at 720K to maximize crystal growth. Additionally, he explores the adjustment of the RESET pulse's falling edge to increase nuclei formation, which enhances SET efficiency and stability.

Another significant patent focuses on multi-level phase change memory cells, featuring a complex design that includes a vertical pillar structure containing different phase change memory (PCM) material portions. This design allows for distinct electrical resistances, optimizing the efficiency and performance of the memory cell.

Career Highlights

Throughout his career, Zhaoqiang Bai has been associated with reputable companies such as SanDisk Technologies Inc. and Western Digital Technologies, Inc. His work in these organizations has been pivotal in the development of advanced memory technologies, showcasing his expertise and influence within the tech industry.

Collaborations

Bai has worked alongside talented colleagues like Mac D Apodaca and Michael Grobis, contributing to collective efforts in enhancing memory technology. Their collaborative efforts highlight the importance of teamwork in the innovation process.

Conclusion

Zhaoqiang Bai's innovative contributions to phase change memory technologies not only underscore his role as an influential inventor but also reflect the ongoing advancements in data storage solutions. With his patented inventions, he continues to shape the future of memory technology, ensuring higher efficiency and reliability in data retention.

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