The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 2020

Filed:

Jun. 05, 2019
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Zhaoqiang Bai, San Jose, CA (US);

Mac Apodaca, San Jose, CA (US);

Michael Grobis, San Jose, CA (US);

Michael Nicolas Albert Tran, San Jose, CA (US);

Neil Leslie Robertson, Palo Alto, CA (US);

Gerardo Bertero, Redwood City, CA (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/06 (2013.01); G11C 13/0004 (2013.01); G11C 13/0069 (2013.01); H01L 27/2427 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/144 (2013.01); H01L 45/146 (2013.01); H01L 45/1608 (2013.01);
Abstract

A phase change memory device includes a phase change material portion located between a first electrode and a second electrode, and a crystallization template material portion located between the first electrode and the second electrode in contact with the phase change material portion. The crystallization template material portion and the phase change material portion belong to a same crystal system and have matching lattice spacing, or the crystallization template material portion and the phase change material portion do not belong to the same crystal system, but have a matching translational symmetry along at least one paired lattice plane with a matching lattice spacing.


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