The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 09, 2021

Filed:

Jun. 10, 2019
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Federico Nardi, San Jose, CA (US);

Ming-Che Wu, San Jose, CA (US);

Tim Minvielle, San Jose, CA (US);

Zhaoqiang Bai, San Jose, CA (US);

Assignee:

SanDisk Technologies LLC, Addison, TX (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2454 (2013.01); G11C 13/004 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 13/0069 (2013.01); G11C 13/0097 (2013.01); H01L 45/1206 (2013.01); H01L 45/141 (2013.01); H01L 45/145 (2013.01); G11C 2213/34 (2013.01); G11C 2213/71 (2013.01); G11C 2213/79 (2013.01);
Abstract

The switching device includes three terminals including an inner surface, an oxide layer on the inner surface of the third terminal, and a chalcogenide pillar extending through the oxide layer and the third terminal, the pillar being in electrical communication with the first terminal and the second terminal, wherein the voltage difference between the first terminal and the second terminal changes the channel from a first state to a second state when a threshold voltage between the first terminal and the second terminal is exceeded, the threshold voltage being dependent on temperature. The third terminal is resistive and receives a control signal to apply heat to the pillar and modulate the threshold voltage. The switching device can be used to select the memory stack through the bitline and provide a nearly limitless current based on the threshold switching conduction providing avalanche current conduction through the switching device.


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