The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2020

Filed:

Jun. 27, 2018
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Michael Grobis, Campbell, CA (US);

Zhaoqiang Bai, San Jose, CA (US);

Ward Parkinson, Boise, ID (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 13/0004 (2013.01); G11C 13/0069 (2013.01); H01L 27/2481 (2013.01); H01L 45/06 (2013.01); H01L 45/1253 (2013.01); H01L 45/1675 (2013.01); G11C 2013/0045 (2013.01); G11C 2013/0078 (2013.01); H01L 45/141 (2013.01); H01L 45/1616 (2013.01);
Abstract

A method of operating a phase change memory device includes flowing a write current of a first polarity through a phase change memory element of a selected phase change memory cell, and flowing a read current of a second polarity opposite to the first polarity through the phase change memory element of the selected phase change memory cell. A first junction between the phase change memory element and a first electrode and a second junction between the phase change memory element and a second electrode exhibit asymmetric thermoelectric heat generation during the step of flowing the write current.


Find Patent Forward Citations

Loading…