Zhaobing Li

Title: Zhaobing Li: Innovator in Nonvolatile Memory Technology

Introduction

Zhaobing Li is a prominent inventor based in Singapore, known for his contributions to the field of nonvolatile memory devices. With a total of four patents to his name, he has made significant advancements in memory technology that enhance device performance and efficiency.

Latest Patents

Zhaobing Li's latest patents include a structure of a nonvolatile memory device with a low-voltage transistor fabricated on a substrate. This innovative design features a substrate that includes both a logic device region and a memory cell region. The first gate structure for a low-voltage transistor is positioned over the substrate in the logic device region, utilizing a single-layer polysilicon. Additionally, a second gate structure for a memory cell is located in the memory cell region, which comprises a gate insulating layer on the substrate. The floating gate layer, made up of a first and second polysilicon layer in a stacked structure, is placed on the gate insulating layer. A memory dielectric layer is then positioned on the floating gate layer, topped with a control gate layer that shares a preliminary polysilicon layer with the single-layer polysilicon.

Another notable patent by Zhaobing Li is a method for fabricating low and high/medium voltage transistors on a substrate. This patent also describes a structure of a nonvolatile memory device similar to his previous work, emphasizing the innovative use of polysilicon layers and gate structures to improve memory device functionality.

Career Highlights

Zhaobing Li is currently employed at United Microelectronics Corporation, where he continues to push the boundaries of memory technology. His work has been instrumental in developing advanced memory solutions that cater to the growing demands of modern electronics.

Collaborations

Zhaobing Li has collaborated with notable coworkers such as Chi Ren and Liang Yi, contributing to a dynamic team focused on innovation in semiconductor technology.

Conclusion

Zhaobing Li's contributions to nonvolatile memory technology have established him as a key figure in the field. His innovative patents and ongoing work at United Microelectronics Corporation continue to influence the future of memory devices.