The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Jun. 21, 2013
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Cheng-Yuan Hsu, Hsinchu, TW;
Zhaobing Li, Singapore, SG;
Chi Ren, Singapore, SG;
Ching-Long Tsai, Taipei, TW;
Wei Cheng, Singapore, SG;
Assignee:
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28273 (2013.01);
Abstract
A floating gate forming process includes the following steps. A substrate containing active areas isolated from each other by isolation structures protruding from the substrate is provided. A first conductive material is formed to conformally cover the active areas and the isolation structure. An etch back process is performed on the first conductive material to respectively form floating gates separated from each other in the active areas.