The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
Dec. 16, 2015
United Microelectronics Corp., Hsin-Chu, TW;
Lingzi Li, Singapore, SG;
Zhaobing Li, Singapore, SG;
Hui Lu, Singapore, SG;
Zhang Hu Sun, Singapore, SG;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A high-voltage semiconductor device includes a semiconductor substrate, a gate structure, a drain, an insulation structure, and a plurality of conductive structures. The insulation structure is disposed in the semiconductor substrate and disposed between the gate structure and the drain. The insulation structure includes a plurality of insulation units disposed separately from one another. Each of the conductive structures is embedded in one of the insulation units.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile