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For the Inventor, By the Inventor

Tullins, France

Yvon Gris

This inventor holds 34 USPTO granted patents, primarily in Integrated Circuits. Top assignees: STMicroelectronics, Sgs-Thomson Microelectronics S.a., Societe Pour L'etude Et La Fabrication De Circuits Integres Speciaux. Active years: 1985-2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yvon Gris. Retrieved from https://idiyas.com/inventor/yvon-gris

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 34

% Patents Active = 97.1

Average Co-Inventor Count = 1.3

ph-index = 6

Forward Citations = 169(Granted Patents)


Location History:

  • Les Obdonniers, FR (1990)
  • Tullins, FR (1985 - 2008)

Company Filing History:

goldMedal19 out of 2,426 
 
STMicroelectronics
 patents
silverMedal12 out of 750 
 
Sgs-Thomson Microelectronics S.a.
 patents
bronzeMedal1 out of 15 
 
Societe Pour L'etude Et La Fabrication De Circuits Integres Speciaux
 patents
4. 1 out of 1 
 
Societe Pour L'etude Et La Fabrication De Circuits Integres Speciauxefcis
 patent
5. 1 out of 834,453 
Other
 patents

Years Active: 1985-2008

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Areas of Expertise:
Integrated Circuit
Fabrication Process
Bipolar Transistor
Photodiode Device
Memory Cell
Self-Aligned Technology
Conductive Lines
Single-Crystal Substrate
Dielectric Isolation
CMOS Technology
NPN Transistor
Capacitor
34 patents (USPTO):Explore Patents
1. 7470585 - Integrated circuit and fabrication process (2008-12-30),
2. 7115933 - Integrated circuit and fabrication process (2006-10-03),
3. 7112461 - Fabrication process for integrated circuit having photodiode device (2006-09-26),
4. 7060596 - Process for fabricating a single-crystal substrate and integrated circuit comprising such a substrate (2006-06-13),
5. 6989310 - Process and installation for doping an etched pattern of resistive elements (2006-01-24),
6. 6984872 - Method for fabricating an NPN transistor in a BICMOS technology (2006-01-10),
7. 6864542 - Bipolar transistor manufacturing method (2005-03-08),
8. 6806536 - Multiple-function electronic chip (2004-10-19),
9. 6689672 - Buried layer manufacturing method (2004-02-10),
10. 6670657 - Integrated circuit having photodiode device and associated fabrication process (2003-12-30),
11. 6614114 - Conductive line formed on integrated circuits (2003-09-02),
12. 6607961 - Method of definition of two self-aligned areas at the upper surface of a substrate (2003-08-19),
13. 6607960 - Bipolar transistor manufacturing method (2003-08-19),
14. 6537873 - Integrated circuit comprising a memory cell of the DRAM type, and fabrication process (2003-03-25),
15. 6506655 - Bipolar transistor manufacturing method (2003-01-14),

Title: Innovator Spotlight: Yvon Gris

Introduction

Yvon Gris is a prominent innovator based in Tullins, France, known for his significant contributions to the field of integrated circuit design and fabrication. With an impressive portfolio of 34 patents, Gris has made notable advancements that have influenced modern semiconductor technology.

Latest Patents

One of Yvon Gris's latest patents focuses on an integrated circuit and its fabrication process. This innovative circuit incorporates at least one semiconductor device for charge storage, which includes an elementary active component and an elementary storage capacitor. The structure comprises a substrate with a lower region that features a buried capacitive elementary trench forming the storage capacitor, along with an elementary well that is laterally electrically isolated. The active component is strategically placed within or on the elementary well, highlighting the intricate designs that Gris has developed for effective charge storage solutions.

Career Highlights

Throughout his career, Yvon Gris has worked with notable companies in the semiconductor industry, including STMicroelectronics and SGS-Thomson Microelectronics. His expertise in designing and fabricating integrated circuits has garnered recognition within the tech community, enhancing the capabilities of modern electronic devices.

Collaborations

Gris has collaborated with talented individuals such as Olivier Menut and Germaine Troillard, further enriching his innovative projects. Their collective expertise and teamwork have propelled various advancements in the field of electronics, facilitating the development of efficient semiconductor technologies.

Conclusion

Yvon Gris's contributions to the realm of integrated circuits and his collaborative efforts highlight the importance of innovation in advancing semiconductor technologies. With his continued research and development, he remains a significant figure in shaping the future of electronics. His work serves as an inspiration to aspiring inventors and innovators in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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