The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2004
Filed:
Apr. 10, 2001
Applicant:
Inventors:
Yvon Gris, Tullins, FR;
Thierry Schwartzmann, Le Versoud, FR;
Assignee:
STMicroelectronics S.A., Montrouge, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1263 ;
U.S. Cl.
CPC ...
H01L 2/1263 ;
Abstract
A method of forming separate buried layers close to one another in a semiconductor component. This method includes the steps of forming, by implantation, doped areas in a semiconductor substrate; performing an anneal just sufficient to eliminate crystal defects resulting from the implantation; depositing an epitaxial layer; digging trenches delimiting each implanted region; and annealing the buried layers, the lateral diffusion of which is blocked by said trenches, said trenches being deeper than the downward extension of the diffusions resulting from said implantations.