Mishima, Japan

Yutaka Yuge


Average Co-Inventor Count = 8.3

ph-index = 3

Forward Citations = 26(Granted Patents)


Company Filing History:


Years Active: 1996-1999

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5 patents (USPTO):Explore Patents

Title: Yutaka Yuge: Innovator in Semiconductor Technology

Introduction

Yutaka Yuge is a prominent inventor based in Mishima, Japan, known for his significant contributions to semiconductor technology. With a total of five patents to his name, Yuge has made strides in the manufacturing methods and design of semiconductor devices.

Latest Patents

Yuge's latest patents include a manufacturing method for a semiconductor apparatus that involves forming an insulating film on the surface of a semiconductor base. This method allows for selective removal of the insulating film to expose the surface, which is then terminated with hydrogen. Energy beams are applied to remove the terminating hydrogen selectively, enabling metal deposition on the areas with remaining hydrogen atoms. Another notable patent is for a semiconductor device featuring an electrode that controls the surface state. This bipolar transistor design includes a control electrode area and aims to prevent depletion of the surface, thereby suppressing current generated in the depletion area.

Career Highlights

Throughout his career, Yutaka Yuge has worked with notable companies, including Canon Inc. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Yuge has collaborated with esteemed colleagues such as Hideshi Kuwabara and Tetsuo Asaba, further enhancing his work in the field of semiconductor devices.

Conclusion

Yutaka Yuge's innovative work in semiconductor technology has led to significant advancements in the industry. His patents reflect a deep understanding of the complexities involved in semiconductor manufacturing and design.

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