The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 1996
Filed:
Oct. 24, 1994
Yuzo Kataoka, Isehara, JP;
Tetsuo Asaba, Odawara, JP;
Kenji Makino, Yokohama, JP;
Hiroshi Yuzurihara, Isehara, JP;
Kei Fujita, Sagamihara, JP;
Seiji Kamei, Hiratsuka, JP;
Yutaka Akino, Isehara, JP;
Yutaka Yuge, Mishima, JP;
Mineo Shimotsusa, Atsugi, JP;
Hideshi Kuwabara, Zama, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A method for manufacturing a mask ROM by first forming a contact hole with a semiconductor within. A surface treatment is then applied to supply by hydrogen atoms to the surface of the semiconductor. The contact hole is selectively irradiated with energy beams so as to produce an irradiated contact hole and a non-irradiated contact hole. In the non-irradiated contact hole a conductive or semiconductor thin film is formed and a circuit formed on the conductive or semiconductor thin film. The circuit and the non-irradiated hole are connected to each other and the irradiated hole and the circuit are insulated from each other.